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CHA2293
RoHS COMPLIANT
24-30GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC Description
The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 24
Typical on wafer measurements :Gain & NF
Main Features
Frequency range : 24-30GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm
Gain (dB)
NF (dB)
25
26
27
28
29
30
Frequency (GHz)
Main Characteristics
Tamb. = 25 C Parameter Min Typ Max Unit
Fop G NF Gctrl Id
Operating frequency range Small signal gain Noise figure Gain control range with Vc variation Bias current
24 24 3 15 160
30
GHz dB
3.5
dB dB mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA22937150 - 30 May 07 1/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25 V5=Vd= 5V C, Symbol
Fop G G Is NF Gctrl P1dB VSWRin
CHA2293
Parameter
Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with Vc=1.2V Gain control range versus Vc Output power at 1dB compression with Vc=1.2V Input VSWR (1)
Min
24 22
Typ
Max
30
Unit
GHz dB dB dB
24 1.5 50 3 3.5
dB dB dBm
12
15 12 4.0:1 2.0:1
VSWRout Output VSWR (1) Vd DC voltage V5= Vd Vc 5 [-0.7,+1.2] 35 160
-1.5
+1.3
V V mA mA
Id1 Id
Bias current (2) with Vc=1.2V Bias current total (3) with Vc=1.2V
(1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1. (3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol
Vd Vc Id Vg Pin Ta Tstg Drain bias voltage Control bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Parameter
Values
5.5 1.5 250 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA22937150 - 30 May 07
2/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz LNA VGA
Typical on wafer Measurements
Bias Conditions :
CHA2293
V5=Vd=5V, Vg1 pour Id1=35mA, Vg=-0.3V, Vc=+1.2V
Typical on-wafer Gain and Return Loss
Bias Conditions : V5=Vd=5V, Vg1 pour Id1=35mA, Vg=-0.3V
Control gain range versus Frequency
Ref. : DSCHA22937150 - 30 May 07 3/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz LNA VGA
Bias Conditions : V5=Vd=5V, Vg1=Vg=-0.3V
CHA2293
Gain versus control voltage
Gain and Noise Figure versus Frequency (Vc=+1.2V)
Ref. : DSCHA22937150 - 30 May 07 4/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz LNA VGA
In jig Measurements
CHA2293
Bias Conditions : V5=Vd=5V, Vg1=Vg=-0.3V, Vc=+1.2V All these measurements include the losses from the jig ( about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power)
Gain & Output power @ 24-30GHz
Gain & Noise figure versus Vc
Ref. : DSCHA22937150 - 30 May 07 5/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz LNA VGA
Chip Assembly and Mechanical Data
CHA2293
Note : Supply feeds should be capacitively bypassed. 25m diameter gold wire is recommended Bond Pad:100 x 100 m
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA22937150 - 30 May 07 6/7 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2293
Ordering Information
Chip form : CHA2293-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSCHA22937150 - 30 May 07
7/7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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